Toshiba Semiconductor and Storage - TK6A50D(STA4,Q,M)

KEY Part #: K6418952

TK6A50D(STA4,Q,M) Pagpepresyo (USD) [84343pcs Stock]

  • 1 pcs$0.51246
  • 50 pcs$0.50991

Bilang ng Bahagi:
TK6A50D(STA4,Q,M)
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
MOSFET N-CH 500V 6A TO-220SIS.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - RF, Transistor - IGBTs - Arrays, Transistor - Espesyal na Pakay, Diode - Zener - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Single and Thyristors - Mga TRIAC ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage TK6A50D(STA4,Q,M) electronic components. TK6A50D(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK6A50D(STA4,Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK6A50D(STA4,Q,M) Mga katangian ng produkto

Bilang ng Bahagi : TK6A50D(STA4,Q,M)
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : MOSFET N-CH 500V 6A TO-220SIS
Serye : π-MOSVII
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 500V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id : 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 35W (Tc)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220SIS
Pakete / Kaso : TO-220-3 Full Pack

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