Toshiba Semiconductor and Storage - TK100S04N1L,LQ

KEY Part #: K6418877

TK100S04N1L,LQ Pagpepresyo (USD) [81067pcs Stock]

  • 1 pcs$0.51416
  • 2,000 pcs$0.51160

Bilang ng Bahagi:
TK100S04N1L,LQ
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
MOSFET N-CH 40V 100A DPAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Single, Mga Transistor - FET, MOSFET - RF, Diode - RF and Thyristors - SCR - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage TK100S04N1L,LQ electronic components. TK100S04N1L,LQ can be shipped within 24 hours after order. If you have any demands for TK100S04N1L,LQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK100S04N1L,LQ Mga katangian ng produkto

Bilang ng Bahagi : TK100S04N1L,LQ
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : MOSFET N-CH 40V 100A DPAK
Serye : U-MOSVIII-H
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 100A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 76nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5490pF @ 10V
Tampok ng FET : -
Power Dissipation (Max) : 100W (Tc)
Temperatura ng pagpapatakbo : 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : DPAK+
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

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