SQJB60EP-T1_GE3 Pagpepresyo (USD) [164478pcs Stock]
- 1 pcs$0.22488
- 3,000 pcs$0.19003
- Bilang ng Bahagi:
- SQJB60EP-T1_GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2 N-CH 60V POWERPAK SO8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga SCR, Diode - Zener - Arrays, Transistor - IGBTs - Mga Module, Transistors - IGBTs - Single and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SQJB60EP-T1_GE3 electronic components. SQJB60EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJB60EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJB60EP-T1_GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SQJB60EP-T1_GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2 N-CH 60V POWERPAK SO8
Serye :
Automotive, AEC-Q101, TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
30A (Tc)
Rds On (Max) @ Id, Vgs :
12 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1600pF @ 25V
Kapangyarihan - Max :
48W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
PowerPAK® SO-8 Dual
Package ng Tagabigay ng Device :
PowerPAK® SO-8 Dual
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