[4137pcs Stock]
- Bilang ng Bahagi:
- IRF7341QTRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 55V 5.1A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistors - IGBTs - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Diode - Mga Rectifier ng Bridge, Thyristors - SCR - Mga Module and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF7341QTRPBF electronic components. IRF7341QTRPBF can be shipped within 24 hours after order. If you have any demands for IRF7341QTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7341QTRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF7341QTRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 55V 5.1A 8-SOIC
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.1A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 5.1A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
780pF @ 25V
Kapangyarihan - Max :
2.4W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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