SQJ244EP-T1_GE3 Pagpepresyo (USD) [144991pcs Stock]
- 1 pcs$0.25510
- Bilang ng Bahagi:
- SQJ244EP-T1_GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET DUAL N-CHA 40V PPAK SO-8L.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Transistor - Espesyal na Pakay, Mga module ng Power driver, Diode - Mga Rectifier ng Bridge, Thyristors - Mga TRIAC, Diode - Rectifiers - Single and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SQJ244EP-T1_GE3 electronic components. SQJ244EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ244EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ244EP-T1_GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SQJ244EP-T1_GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET DUAL N-CHA 40V PPAK SO-8L
Serye :
Automotive, AEC-Q101, TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual) Asymmetrical
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs :
11 mOhm @ 4A, 10V, 4.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V, 2800pF @ 25V
Kapangyarihan - Max :
27W (Tc), 48W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
PowerPAK® SO-8 Dual
Package ng Tagabigay ng Device :
PowerPAK® SO-8 Dual Asymmetric
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