IXFX200N10P Pagpepresyo (USD) [9721pcs Stock]
- 1 pcs$4.68680
- 30 pcs$4.66349
- Bilang ng Bahagi:
- IXFX200N10P
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 200A PLUS247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Transistor - Espesyal na Pakay, Diode - Mga Rectifier ng Bridge, Diode - Zener - Single, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Single and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFX200N10P electronic components. IXFX200N10P can be shipped within 24 hours after order. If you have any demands for IXFX200N10P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX200N10P Mga katangian ng produkto
Bilang ng Bahagi :
IXFX200N10P
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 100V 200A PLUS247
Serye :
HiPerFET™, PolarP2™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
200A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
235nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7600pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
830W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PLUS247™-3
Pakete / Kaso :
TO-247-3
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