IXTY1R4N120PHV Pagpepresyo (USD) [41564pcs Stock]
- 1 pcs$0.94072
- Bilang ng Bahagi:
- IXTY1R4N120PHV
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Mga module ng Power driver, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Arrays, Diode - Zener - Arrays, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTY1R4N120PHV electronic components. IXTY1R4N120PHV can be shipped within 24 hours after order. If you have any demands for IXTY1R4N120PHV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY1R4N120PHV Mga katangian ng produkto
Bilang ng Bahagi :
IXTY1R4N120PHV
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH
Serye :
Polar™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13 Ohm @ 700mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
24.8nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
666pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
86W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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