[4069pcs Stock]
- Bilang ng Bahagi:
- EPC2103ENG
- Tagagawa:
- EPC
- Detalyadong Paglalarawan:
- GAN TRANS 2N-CH 80V BUMPED DIE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Arrays, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Diode - RF, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single and Transistor - IGBTs - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in EPC EPC2103ENG electronic components. EPC2103ENG can be shipped within 24 hours after order. If you have any demands for EPC2103ENG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2103ENG Mga katangian ng produkto
Bilang ng Bahagi :
EPC2103ENG
Tagagawa :
EPC
Paglalarawan :
GAN TRANS 2N-CH 80V BUMPED DIE
Serye :
eGaN®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Half Bridge)
Tampok ng FET :
GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) :
80V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
23A
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs :
6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
760pF @ 40V
Kapangyarihan - Max :
-
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
Die
Package ng Tagabigay ng Device :
Die
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