IXYS - IXTP3N100D2

KEY Part #: K6397864

IXTP3N100D2 Pagpepresyo (USD) [32137pcs Stock]

  • 1 pcs$1.41465
  • 10 pcs$1.27583
  • 100 pcs$0.97271
  • 500 pcs$0.75655
  • 1,000 pcs$0.62686

Bilang ng Bahagi:
IXTP3N100D2
Tagagawa:
IXYS
Detalyadong Paglalarawan:
MOSFET N-CH 1000V 3A TO220AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Programmable Unijunction, Mga module ng Power driver, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Arrays, Diode - Rectifiers - Single and Mga Transistor - FET, MOSFET - RF ...
Kumpetensyang Pakinabang:
We specialize in IXYS IXTP3N100D2 electronic components. IXTP3N100D2 can be shipped within 24 hours after order. If you have any demands for IXTP3N100D2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP3N100D2 Mga katangian ng produkto

Bilang ng Bahagi : IXTP3N100D2
Tagagawa : IXYS
Paglalarawan : MOSFET N-CH 1000V 3A TO220AB
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 3A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 5.5 Ohm @ 1.5A, 0V
Vgs (th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 37.5nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1020pF @ 25V
Tampok ng FET : Depletion Mode
Power Dissipation (Max) : 125W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220AB
Pakete / Kaso : TO-220-3

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