[1596pcs Stock]
- Bilang ng Bahagi:
- TK4A60DB(STA4,Q,M)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 3.7A TO-220SIS.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK4A60DB(STA4,Q,M) electronic components. TK4A60DB(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK4A60DB(STA4,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK4A60DB(STA4,Q,M) Mga katangian ng produkto
Bilang ng Bahagi :
TK4A60DB(STA4,Q,M)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 600V 3.7A TO-220SIS
Serye :
π-MOSVII
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.7A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
540pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
35W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220SIS
Pakete / Kaso :
TO-220-3 Full Pack
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