[1601pcs Stock]
- Bilang ng Bahagi:
- TPC6009-H(TE85L,FM
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 40V 5.3A VS6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Transistor - IGBTs - Mga Module, Thyristors - SCR - Mga Module, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Mga Transistor - JFET and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TPC6009-H(TE85L,FM electronic components. TPC6009-H(TE85L,FM can be shipped within 24 hours after order. If you have any demands for TPC6009-H(TE85L,FM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC6009-H(TE85L,FM Mga katangian ng produkto
Bilang ng Bahagi :
TPC6009-H(TE85L,FM
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 40V 5.3A VS6
Serye :
U-MOSVI-H
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
81 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
4.7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
700mW (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
VS-6 (2.9x2.8)
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
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