Vishay Siliconix - SI4276DY-T1-E3

KEY Part #: K6521880

SI4276DY-T1-E3 Pagpepresyo (USD) [167720pcs Stock]

  • 1 pcs$0.22053
  • 2,500 pcs$0.20708

Bilang ng Bahagi:
SI4276DY-T1-E3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET 2N-CH 30V 8A 8SO.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Diode - Rectifiers - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SI4276DY-T1-E3 electronic components. SI4276DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4276DY-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4276DY-T1-E3 Mga katangian ng produkto

Bilang ng Bahagi : SI4276DY-T1-E3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET 2N-CH 30V 8A 8SO
Serye : TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 8A
Rds On (Max) @ Id, Vgs : 15.3 mOhm @ 9.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1000pF @ 15V
Kapangyarihan - Max : 3.6W, 2.8W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device : 8-SO

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