SIB912DK-T1-GE3 Pagpepresyo (USD) [471021pcs Stock]
- 1 pcs$0.07853
- 3,000 pcs$0.07418
- Bilang ng Bahagi:
- SIB912DK-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 1.5A SC-75-6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Thyristors - Mga TRIAC, Transistor - Programmable Unijunction, Thyristors - Mga SCR, Transistor - IGBTs - Arrays, Transistor - IGBTs - Mga Module, Thyristors - SCR - Mga Module and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIB912DK-T1-GE3 electronic components. SIB912DK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB912DK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB912DK-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIB912DK-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2N-CH 20V 1.5A SC-75-6
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.5A
Rds On (Max) @ Id, Vgs :
216 mOhm @ 1.8A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds :
95pF @ 10V
Kapangyarihan - Max :
3.1W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
PowerPAK® SC-75-6L Dual
Package ng Tagabigay ng Device :
PowerPAK® SC-75-6L Dual
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