FDC638P Pagpepresyo (USD) [699119pcs Stock]
- 1 pcs$0.05291
- 3,000 pcs$0.05039
- Bilang ng Bahagi:
- FDC638P
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET P-CH 20V 4.5A SSOT-6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - IGBTs - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Diode - Zener - Single, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Arrays, Mga module ng Power driver and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDC638P electronic components. FDC638P can be shipped within 24 hours after order. If you have any demands for FDC638P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDC638P Mga katangian ng produkto
Bilang ng Bahagi :
FDC638P
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET P-CH 20V 4.5A SSOT-6
Serye :
PowerTrench®
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
48 mOhm @ 4.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
1160pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
1.6W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SuperSOT™-6
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
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