IPN70R2K1CEATMA1 Pagpepresyo (USD) [393193pcs Stock]
- 1 pcs$0.09407
- 3,000 pcs$0.08631
- Bilang ng Bahagi:
- IPN70R2K1CEATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CHANNEL 750V 4A SOT223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Diode - Mga Rectifier ng Bridge, Diode - RF, Diode - Rectifiers - Arrays, Mga module ng Power driver, Diode - Zener - Single, Transistor - Espesyal na Pakay and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPN70R2K1CEATMA1 electronic components. IPN70R2K1CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN70R2K1CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN70R2K1CEATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPN70R2K1CEATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CHANNEL 750V 4A SOT223
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
750V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.1 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs :
7.8nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
163pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
5W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-SOT223
Pakete / Kaso :
SOT-223-3
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