Toshiba Semiconductor and Storage - TPC6113(TE85L,F,M)

KEY Part #: K6421262

TPC6113(TE85L,F,M) Pagpepresyo (USD) [410451pcs Stock]

  • 1 pcs$0.09962
  • 3,000 pcs$0.09913

Bilang ng Bahagi:
TPC6113(TE85L,F,M)
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
MOSFET P-CH 20V 5A VS6.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
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Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage TPC6113(TE85L,F,M) electronic components. TPC6113(TE85L,F,M) can be shipped within 24 hours after order. If you have any demands for TPC6113(TE85L,F,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPC6113(TE85L,F,M) Mga katangian ng produkto

Bilang ng Bahagi : TPC6113(TE85L,F,M)
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : MOSFET P-CH 20V 5A VS6
Serye : U-MOSVI
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 55 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 690pF @ 10V
Tampok ng FET : -
Power Dissipation (Max) : 700mW (Ta)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : VS-6 (2.9x2.8)
Pakete / Kaso : SOT-23-6 Thin, TSOT-23-6

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