Diodes Incorporated - DMN33D8LDW-7

KEY Part #: K6523033

DMN33D8LDW-7 Pagpepresyo (USD) [1180825pcs Stock]

  • 1 pcs$0.03132
  • 3,000 pcs$0.02871

Bilang ng Bahagi:
DMN33D8LDW-7
Tagagawa:
Diodes Incorporated
Detalyadong Paglalarawan:
MOSFET 2N-CH 30V 0.25A.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Transistor - IGBTs - Arrays, Diode - Rectifiers - Arrays, Diode - Zener - Single, Transistors - IGBTs - Single, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF and Mga Transistor - JFET ...
Kumpetensyang Pakinabang:
We specialize in Diodes Incorporated DMN33D8LDW-7 electronic components. DMN33D8LDW-7 can be shipped within 24 hours after order. If you have any demands for DMN33D8LDW-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN33D8LDW-7 Mga katangian ng produkto

Bilang ng Bahagi : DMN33D8LDW-7
Tagagawa : Diodes Incorporated
Paglalarawan : MOSFET 2N-CH 30V 0.25A
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Standard
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 250mA
Rds On (Max) @ Id, Vgs : 2.4 Ohm @ 250mA, 10V
Vgs (th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 48pF @ 5V
Kapangyarihan - Max : 350mW
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device : SOT-363

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