IPC26N12NX1SA1 Pagpepresyo (USD) [29117pcs Stock]
- 1 pcs$2.50318
- Bilang ng Bahagi:
- IPC26N12NX1SA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 120V 1A SAWN ON FOIL.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Single, Mga Transistor - FET, MOSFET - RF, Mga Transistor - JFET, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPC26N12NX1SA1 electronic components. IPC26N12NX1SA1 can be shipped within 24 hours after order. If you have any demands for IPC26N12NX1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPC26N12NX1SA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPC26N12NX1SA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 120V 1A SAWN ON FOIL
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
120V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1A (Tj)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id :
4V @ 244µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Sawn on foil
Pakete / Kaso :
Die
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