DMT3022UEV-7 Pagpepresyo (USD) [325631pcs Stock]
- 1 pcs$0.11359
- Bilang ng Bahagi:
- DMT3022UEV-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET BVDSS 25V-30V POWERDI333.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Espesyal na Pakay, Diode - Zener - Single, Transistors - IGBTs - Single and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMT3022UEV-7 electronic components. DMT3022UEV-7 can be shipped within 24 hours after order. If you have any demands for DMT3022UEV-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT3022UEV-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMT3022UEV-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET BVDSS 25V-30V POWERDI333
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
17A (Tc)
Rds On (Max) @ Id, Vgs :
22 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
903pF @ 15V
Kapangyarihan - Max :
900mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
PowerDI3333-8
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