Vishay Siliconix - SI7252DP-T1-GE3

KEY Part #: K6525136

SI7252DP-T1-GE3 Pagpepresyo (USD) [84291pcs Stock]

  • 1 pcs$0.46388
  • 3,000 pcs$0.43461

Bilang ng Bahagi:
SI7252DP-T1-GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET 2N-CH 100V 36.7A PPAK 8SO.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Mga Transistor - FET, MOSFET - RF, Thyristors - DIACs, SIDACs, Diode - RF, Diode - Rectifiers - Single, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased and Diode - Mga Rectifier ng Bridge ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SI7252DP-T1-GE3 electronic components. SI7252DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7252DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7252DP-T1-GE3 Mga katangian ng produkto

Bilang ng Bahagi : SI7252DP-T1-GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET 2N-CH 100V 36.7A PPAK 8SO
Serye : TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 36.7A
Rds On (Max) @ Id, Vgs : 18 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1170pF @ 50V
Kapangyarihan - Max : 46W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : PowerPAK® SO-8 Dual
Package ng Tagabigay ng Device : PowerPAK® SO-8 Dual

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