SI1967DH-T1-E3 Pagpepresyo (USD) [575693pcs Stock]
- 1 pcs$0.06425
- 3,000 pcs$0.06069
- Bilang ng Bahagi:
- SI1967DH-T1-E3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2P-CH 20V 1.3A SC70-6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Diode - Zener - Single, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Thyristors - Mga SCR and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI1967DH-T1-E3 electronic components. SI1967DH-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI1967DH-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1967DH-T1-E3 Mga katangian ng produkto
Bilang ng Bahagi :
SI1967DH-T1-E3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2P-CH 20V 1.3A SC70-6
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 P-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.3A
Rds On (Max) @ Id, Vgs :
490 mOhm @ 910mA, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 10V
Kapangyarihan - Max :
1.25W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device :
SC-70-6 (SOT-363)
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