SI5513CDC-T1-GE3 Pagpepresyo (USD) [383787pcs Stock]
- 1 pcs$0.09638
- 3,000 pcs$0.09104
- Bilang ng Bahagi:
- SI5513CDC-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 20V 4A 1206-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Mga Module, Thyristors - SCR - Mga Module, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Arrays and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI5513CDC-T1-GE3 electronic components. SI5513CDC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5513CDC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5513CDC-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI5513CDC-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N/P-CH 20V 4A 1206-8
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N and P-Channel
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4A, 3.7A
Rds On (Max) @ Id, Vgs :
55 mOhm @ 4.4A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
285pF @ 10V
Kapangyarihan - Max :
3.1W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SMD, Flat Lead
Package ng Tagabigay ng Device :
1206-8 ChipFET™
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