SI8902AEDB-T2-E1 Pagpepresyo (USD) [278320pcs Stock]
- 1 pcs$0.13290
- Bilang ng Bahagi:
- SI8902AEDB-T2-E1
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- N-CHANNEL 24-V D-S MOSFET.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - Programmable Unijunction, Thyristors - DIACs, SIDACs, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Arrays and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI8902AEDB-T2-E1 electronic components. SI8902AEDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8902AEDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8902AEDB-T2-E1 Mga katangian ng produkto
Bilang ng Bahagi :
SI8902AEDB-T2-E1
Tagagawa :
Vishay Siliconix
Paglalarawan :
N-CHANNEL 24-V D-S MOSFET
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
24V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A
Rds On (Max) @ Id, Vgs :
28 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Kapangyarihan - Max :
5.7W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-UFBGA
Package ng Tagabigay ng Device :
6-Micro Foot™ (1.5x1)
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