DMN3730UFB4-7 Pagpepresyo (USD) [490925pcs Stock]
- 1 pcs$0.10144
- 3,000 pcs$0.10093
- Bilang ng Bahagi:
- DMN3730UFB4-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 750MA DFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga TRIAC, Diode - Rectifiers - Single, Transistor - Espesyal na Pakay, Mga Transistor - FET, MOSFET - RF, Diode - RF and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN3730UFB4-7 electronic components. DMN3730UFB4-7 can be shipped within 24 hours after order. If you have any demands for DMN3730UFB4-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3730UFB4-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMN3730UFB4-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 30V 750MA DFN
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
750mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
460 mOhm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.6nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
64.3pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
470mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
X2-DFN1006-3
Pakete / Kaso :
3-XFDFN
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