[76pcs Stock]
- Bilang ng Bahagi:
- APTMC120AM08CD3AG
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 1200V 250A D3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - IGBTs - Mga Module, Transistor - IGBTs - Arrays, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation APTMC120AM08CD3AG electronic components. APTMC120AM08CD3AG can be shipped within 24 hours after order. If you have any demands for APTMC120AM08CD3AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTMC120AM08CD3AG Mga katangian ng produkto
Bilang ng Bahagi :
APTMC120AM08CD3AG
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET 2N-CH 1200V 250A D3
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Half Bridge)
Tampok ng FET :
Silicon Carbide (SiC)
Drain sa Source Voltage (Vdss) :
1200V (1.2kV)
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
250A (Tc)
Rds On (Max) @ Id, Vgs :
10 mOhm @ 200A, 20V
Vgs (th) (Max) @ Id :
2.2V @ 10mA (Typ)
Gate Charge (Qg) (Max) @ Vgs :
490nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds :
9500pF @ 1000V
Kapangyarihan - Max :
1100W
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
D-3 Module
Package ng Tagabigay ng Device :
D3
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