FDD3510H Pagpepresyo (USD) [180396pcs Stock]
- 1 pcs$0.20504
- 2,500 pcs$0.19612
- Bilang ng Bahagi:
- FDD3510H
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 80V 4.3A/2.8A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Transistor - IGBTs - Mga Module, Transistor - Espesyal na Pakay, Transistor - IGBTs - Arrays, Diode - Rectifiers - Arrays, Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Single and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDD3510H electronic components. FDD3510H can be shipped within 24 hours after order. If you have any demands for FDD3510H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD3510H Mga katangian ng produkto
Bilang ng Bahagi :
FDD3510H
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N/P-CH 80V 4.3A/2.8A DPAK
Serye :
PowerTrench®
Katayuan ng Bahagi :
Active
Uri ng FET :
N and P-Channel, Common Drain
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
80V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.3A, 2.8A
Rds On (Max) @ Id, Vgs :
80 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 40V
Kapangyarihan - Max :
1.3W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Package ng Tagabigay ng Device :
TO-252-4L
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