SI4778DY-T1-GE3 Pagpepresyo (USD) [12677pcs Stock]
- 2,500 pcs$0.09710
- Bilang ng Bahagi:
- SI4778DY-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 25V 8A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Diode - RF, Diode - Zener - Arrays, Thyristors - Mga SCR, Thyristors - SCR - Mga Module, Transistors - IGBTs - Single and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI4778DY-T1-GE3 electronic components. SI4778DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4778DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4778DY-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI4778DY-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 25V 8A 8-SOIC
Serye :
TrenchFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
23 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
680pF @ 13V
Tampok ng FET :
-
Power Dissipation (Max) :
2.4W (Ta), 5W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SO
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
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