[3241pcs Stock]
- Bilang ng Bahagi:
- IXTM35N30
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- POWER MOSFET TO-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - Zener - Arrays, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga module ng Power driver and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTM35N30 electronic components. IXTM35N30 can be shipped within 24 hours after order. If you have any demands for IXTM35N30, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTM35N30 Mga katangian ng produkto
Bilang ng Bahagi :
IXTM35N30
Tagagawa :
IXYS
Paglalarawan :
POWER MOSFET TO-3
Serye :
GigaMOS™
Katayuan ng Bahagi :
Last Time Buy
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
300V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
35A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
300W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-204AE
Pakete / Kaso :
TO-204AE
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