CSD16570Q5BT Pagpepresyo (USD) [56679pcs Stock]
- 1 pcs$0.68986
- 250 pcs$0.63802
- 1,250 pcs$0.48291
- Bilang ng Bahagi:
- CSD16570Q5BT
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- MOSFET N-CH 25V 100A 8VSON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Diode - Rectifiers - Single, Diode - Zener - Arrays, Mga module ng Power driver, Thyristors - SCR - Mga Module, Thyristors - Mga TRIAC, Mga Transistor - FET, MOSFET - RF and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD16570Q5BT electronic components. CSD16570Q5BT can be shipped within 24 hours after order. If you have any demands for CSD16570Q5BT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD16570Q5BT Mga katangian ng produkto
Bilang ng Bahagi :
CSD16570Q5BT
Tagagawa :
Texas Instruments
Paglalarawan :
MOSFET N-CH 25V 100A 8VSON
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
0.59 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
14000pF @ 12V
Tampok ng FET :
-
Power Dissipation (Max) :
3.2W (Ta), 195W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-VSONP (5x6)
Pakete / Kaso :
8-PowerTDFN
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