TK9P65W,RQ Pagpepresyo (USD) [118862pcs Stock]
- 1 pcs$0.31118
- 2,000 pcs$0.30893
- Bilang ng Bahagi:
- TK9P65W,RQ
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V 9.3A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Diode - Rectifiers - Arrays, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK9P65W,RQ electronic components. TK9P65W,RQ can be shipped within 24 hours after order. If you have any demands for TK9P65W,RQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK9P65W,RQ Mga katangian ng produkto
Bilang ng Bahagi :
TK9P65W,RQ
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 650V 9.3A DPAK
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9.3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
560 mOhm @ 4.6A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
700pF @ 300V
Tampok ng FET :
-
Power Dissipation (Max) :
80W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DPAK
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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