PMDXB600UNEZ Pagpepresyo (USD) [451031pcs Stock]
- 1 pcs$0.08242
- 5,000 pcs$0.08201
- Bilang ng Bahagi:
- PMDXB600UNEZ
- Tagagawa:
- Nexperia USA Inc.
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 0.6A 6DFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Single, Mga Transistor - FET, MOSFET - RF, Transistors - IGBTs - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Nexperia USA Inc. PMDXB600UNEZ electronic components. PMDXB600UNEZ can be shipped within 24 hours after order. If you have any demands for PMDXB600UNEZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDXB600UNEZ Mga katangian ng produkto
Bilang ng Bahagi :
PMDXB600UNEZ
Tagagawa :
Nexperia USA Inc.
Paglalarawan :
MOSFET 2N-CH 20V 0.6A 6DFN
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
600mA
Rds On (Max) @ Id, Vgs :
620 mOhm @ 600mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
21.3pF @ 10V
Kapangyarihan - Max :
265mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-XFDFN Exposed Pad
Package ng Tagabigay ng Device :
DFN1010B-6
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