DMN3013LDG-13 Pagpepresyo (USD) [257668pcs Stock]
- 1 pcs$0.14355
- Bilang ng Bahagi:
- DMN3013LDG-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET BVDSS 25V-30V POWERDI333.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Single, Thyristors - DIACs, SIDACs, Diode - Rectifiers - Single, Diode - Rectifiers - Arrays and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN3013LDG-13 electronic components. DMN3013LDG-13 can be shipped within 24 hours after order. If you have any demands for DMN3013LDG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3013LDG-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMN3013LDG-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET BVDSS 25V-30V POWERDI333
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9.5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs :
14.3 mOhm @ 4A, 8V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
600pF @ 15V
Kapangyarihan - Max :
2.16W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerLDFN
Package ng Tagabigay ng Device :
PowerDI3333-8
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