IXFR34N80 Pagpepresyo (USD) [5204pcs Stock]
- 1 pcs$9.62165
- 30 pcs$9.57378
- Bilang ng Bahagi:
- IXFR34N80
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 28A ISOPLUS247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Thyristors - Mga TRIAC, Diode - Zener - Single, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Arrays and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFR34N80 electronic components. IXFR34N80 can be shipped within 24 hours after order. If you have any demands for IXFR34N80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFR34N80 Mga katangian ng produkto
Bilang ng Bahagi :
IXFR34N80
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 800V 28A ISOPLUS247
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
28A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
240 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
416W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
ISOPLUS247™
Pakete / Kaso :
ISOPLUS247™
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