[1224pcs Stock]
- Bilang ng Bahagi:
- TK40P03M1(T6RSS-Q)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 40A 3DP 2-7K1A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - IGBTs - Mga Module, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Single, Diode - Zener - Single, Thyristors - Mga SCR, Transistor - IGBTs - Arrays and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK40P03M1(T6RSS-Q) electronic components. TK40P03M1(T6RSS-Q) can be shipped within 24 hours after order. If you have any demands for TK40P03M1(T6RSS-Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK40P03M1(T6RSS-Q) Mga katangian ng produkto
Bilang ng Bahagi :
TK40P03M1(T6RSS-Q)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 30V 40A 3DP 2-7K1A
Serye :
U-MOSVI-H
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
40A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
17.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1150pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DP
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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