FDN8601 Pagpepresyo (USD) [242912pcs Stock]
- 1 pcs$0.15303
- 3,000 pcs$0.15227
- Bilang ng Bahagi:
- FDN8601
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 2.7A 3SSOT.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga TRIAC, Transistor - Mga FET, MOSFET - Single, Diode - RF, Diode - Rectifiers - Arrays and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDN8601 electronic components. FDN8601 can be shipped within 24 hours after order. If you have any demands for FDN8601, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDN8601 Mga katangian ng produkto
Bilang ng Bahagi :
FDN8601
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 100V 2.7A 3SSOT
Serye :
PowerTrench®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.7A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
109 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
210pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
1.5W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SuperSOT-3
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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