STI11NM80 Pagpepresyo (USD) [22019pcs Stock]
- 1 pcs$1.88106
- 1,000 pcs$1.87170
- Bilang ng Bahagi:
- STI11NM80
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 11A I2PAK-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Single, Thyristors - DIACs, SIDACs, Mga Transistor - FET, MOSFET - RF and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STI11NM80 electronic components. STI11NM80 can be shipped within 24 hours after order. If you have any demands for STI11NM80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STI11NM80 Mga katangian ng produkto
Bilang ng Bahagi :
STI11NM80
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 800V 11A I2PAK-3
Serye :
MDmesh™
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
400 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
43.6nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1630pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
150W (Tc)
Temperatura ng pagpapatakbo :
-65°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I2PAK (TO-262)
Pakete / Kaso :
TO-262-3 Long Leads, I²Pak, TO-262AA
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