GA50JT06-258 Pagpepresyo (USD) [140pcs Stock]
- 1 pcs$333.42398
- 10 pcs$331.76515
- Bilang ng Bahagi:
- GA50JT06-258
- Tagagawa:
- GeneSiC Semiconductor
- Detalyadong Paglalarawan:
- TRANS SJT 600V 100A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Arrays, Thyristors - SCR - Mga Module, Thyristors - Mga TRIAC, Transistor - Programmable Unijunction and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in GeneSiC Semiconductor GA50JT06-258 electronic components. GA50JT06-258 can be shipped within 24 hours after order. If you have any demands for GA50JT06-258, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GA50JT06-258 Mga katangian ng produkto
Bilang ng Bahagi :
GA50JT06-258
Tagagawa :
GeneSiC Semiconductor
Paglalarawan :
TRANS SJT 600V 100A
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
-
Teknolohiya :
SiC (Silicon Carbide Junction Transistor)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
25 mOhm @ 50A
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
769W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 225°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-258
Pakete / Kaso :
TO-258-3, TO-258AA
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