IRF5210PBF Pagpepresyo (USD) [33280pcs Stock]
- 1 pcs$0.92400
- 10 pcs$0.83536
- 100 pcs$0.67126
- 500 pcs$0.52210
- 1,000 pcs$0.43260
- Bilang ng Bahagi:
- IRF5210PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET P-CH 100V 40A TO-220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Espesyal na Pakay, Diode - Zener - Arrays, Transistor - IGBTs - Arrays, Thyristors - Mga SCR, Mga Transistor - JFET, Diode - RF and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF5210PBF electronic components. IRF5210PBF can be shipped within 24 hours after order. If you have any demands for IRF5210PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5210PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF5210PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET P-CH 100V 40A TO-220AB
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
40A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 24A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
200W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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