IXFH130N15X3 Pagpepresyo (USD) [14255pcs Stock]
- 1 pcs$2.89099
- Bilang ng Bahagi:
- IXFH130N15X3
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga TRIAC, Transistor - IGBTs - Arrays, Transistor - Mga FET, MOSFET - Single, Mga Transistor - Bipolar (BJT) - RF, Mga module ng Power driver and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFH130N15X3 electronic components. IXFH130N15X3 can be shipped within 24 hours after order. If you have any demands for IXFH130N15X3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH130N15X3 Mga katangian ng produkto
Bilang ng Bahagi :
IXFH130N15X3
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
150V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
130A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9 mOhm @ 65A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5230pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
390W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247
Pakete / Kaso :
TO-247-3
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