Vishay Siliconix - VQ1001P-E3

KEY Part #: K6523756

[4059pcs Stock]


    Bilang ng Bahagi:
    VQ1001P-E3
    Tagagawa:
    Vishay Siliconix
    Detalyadong Paglalarawan:
    MOSFET 4N-CH 30V 0.83A 14DIP.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Mga FET, MOSFET - Arrays, Transistor - Programmable Unijunction, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Arrays and Diode - Rectifiers - Arrays ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Siliconix VQ1001P-E3 electronic components. VQ1001P-E3 can be shipped within 24 hours after order. If you have any demands for VQ1001P-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VQ1001P-E3 Mga katangian ng produkto

    Bilang ng Bahagi : VQ1001P-E3
    Tagagawa : Vishay Siliconix
    Paglalarawan : MOSFET 4N-CH 30V 0.83A 14DIP
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Uri ng FET : 4 N-Channel
    Tampok ng FET : Logic Level Gate
    Drain sa Source Voltage (Vdss) : 30V
    Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 830mA
    Rds On (Max) @ Id, Vgs : 1.75 Ohm @ 200mA, 5V
    Vgs (th) (Max) @ Id : 2.5V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : -
    Input Capacitance (Ciss) (Max) @ Vds : 110pF @ 15V
    Kapangyarihan - Max : 2W
    Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
    Uri ng Pag-mount : Through Hole
    Pakete / Kaso : -
    Package ng Tagabigay ng Device : 14-DIP

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