IXTP02N120P Pagpepresyo (USD) [62346pcs Stock]
- 1 pcs$0.62715
- 350 pcs$0.55189
- Bilang ng Bahagi:
- IXTP02N120P
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1200V 0.2A TO-220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Thyristors - Mga SCR, Transistor - IGBTs - Mga Module, Diode - Zener - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Single and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTP02N120P electronic components. IXTP02N120P can be shipped within 24 hours after order. If you have any demands for IXTP02N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP02N120P Mga katangian ng produkto
Bilang ng Bahagi :
IXTP02N120P
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1200V 0.2A TO-220
Serye :
Polar™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
200mA (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
75 Ohm @ 100mA, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
4.7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
104pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
33W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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