Vishay Siliconix - SQV120N06-4M7L_GE3

KEY Part #: K6417898

SQV120N06-4M7L_GE3 Pagpepresyo (USD) [45191pcs Stock]

  • 1 pcs$0.86522

Bilang ng Bahagi:
SQV120N06-4M7L_GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET N-CH 60V 120A TO262-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistor - IGBTs - Mga Module, Transistor - Programmable Unijunction, Mga Transistor - FET, MOSFET - RF, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCR - Mga Module and Diode - Zener - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SQV120N06-4M7L_GE3 electronic components. SQV120N06-4M7L_GE3 can be shipped within 24 hours after order. If you have any demands for SQV120N06-4M7L_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQV120N06-4M7L_GE3 Mga katangian ng produkto

Bilang ng Bahagi : SQV120N06-4M7L_GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET N-CH 60V 120A TO262-3
Serye : Automotive, AEC-Q101, TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.7 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 230nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 8800pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 250W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-262-3
Pakete / Kaso : TO-262-3 Long Leads, I²Pak, TO-262AA

Maaari ka ring Makisalamuha sa
  • BS107P

    Diodes Incorporated

    MOSFET N-CH 200V 120MA TO92-3.

  • IRFR3607TRPBF

    Infineon Technologies

    MOSFET N-CH 75V 56A DPAK.

  • IXTY2N100P

    IXYS

    MOSFET N-CH 1000V 2A TO-252.

  • TK8A60W,S4VX

    Toshiba Semiconductor and Storage

    MOSFET N CH 600V 8A TO-220SIS.

  • SPA11N60CFDXKSA1

    Infineon Technologies

    MOSFET N-CH 600V 11A TO220-3.

  • IPA65R190E6XKSA1

    Infineon Technologies

    MOSFET N-CH 650V 20.2A TO220.