DMG6602SVT-7 Pagpepresyo (USD) [885618pcs Stock]
- 1 pcs$0.04176
- 3,000 pcs$0.03828
- Bilang ng Bahagi:
- DMG6602SVT-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 30V TSOT23-6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga TRIAC and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMG6602SVT-7 electronic components. DMG6602SVT-7 can be shipped within 24 hours after order. If you have any demands for DMG6602SVT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG6602SVT-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMG6602SVT-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N/P-CH 30V TSOT23-6
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
N and P-Channel
Tampok ng FET :
Logic Level Gate, 4.5V Drive
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.4A, 2.8A
Rds On (Max) @ Id, Vgs :
60 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 15V
Kapangyarihan - Max :
840mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
Package ng Tagabigay ng Device :
TSOT-23-6
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