TPN22006NH,LQ Pagpepresyo (USD) [293170pcs Stock]
- 1 pcs$0.13947
- 3,000 pcs$0.13878
- Bilang ng Bahagi:
- TPN22006NH,LQ
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N CH 60V 9A 8-TSON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Mga Transistor - JFET, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Single, Transistor - Programmable Unijunction, Diode - RF and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TPN22006NH,LQ electronic components. TPN22006NH,LQ can be shipped within 24 hours after order. If you have any demands for TPN22006NH,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN22006NH,LQ Mga katangian ng produkto
Bilang ng Bahagi :
TPN22006NH,LQ
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N CH 60V 9A 8-TSON
Serye :
U-MOSVIII-H
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6.5V, 10V
Rds On (Max) @ Id, Vgs :
22 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
710pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
700mW (Ta), 18W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-TSON Advance (3.3x3.3)
Pakete / Kaso :
8-PowerVDFN
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