SI2312BDS-T1-GE3 Pagpepresyo (USD) [529776pcs Stock]
- 1 pcs$0.06982
- 3,000 pcs$0.06317
- Bilang ng Bahagi:
- SI2312BDS-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 20V 3.9A SOT23-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Arrays and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI2312BDS-T1-GE3 electronic components. SI2312BDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2312BDS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2312BDS-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI2312BDS-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 20V 3.9A SOT23-3
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.9A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
31 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
750mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-23-3 (TO-236)
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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