APTSM120AM09CD3AG Pagpepresyo (USD) [150pcs Stock]
- 1 pcs$307.75101
- 100 pcs$306.21991
- Bilang ng Bahagi:
- APTSM120AM09CD3AG
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- MOSFET 2 N-CH 1200V 337A MODULE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Diode - RF, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation APTSM120AM09CD3AG electronic components. APTSM120AM09CD3AG can be shipped within 24 hours after order. If you have any demands for APTSM120AM09CD3AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTSM120AM09CD3AG Mga katangian ng produkto
Bilang ng Bahagi :
APTSM120AM09CD3AG
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET 2 N-CH 1200V 337A MODULE
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Silicon Carbide (SiC)
Drain sa Source Voltage (Vdss) :
1200V (1.2kV)
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
337A (Tc)
Rds On (Max) @ Id, Vgs :
11 mOhm @ 180A, 20V
Vgs (th) (Max) @ Id :
3V @ 9mA
Gate Charge (Qg) (Max) @ Vgs :
1224nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 1000V
Kapangyarihan - Max :
-
Temperatura ng pagpapatakbo :
-40°C ~ 175°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
Module
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