SIHB33N60ET1-GE3 Pagpepresyo (USD) [24071pcs Stock]
- 1 pcs$1.71212
- Bilang ng Bahagi:
- SIHB33N60ET1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 33A TO263.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - DIACs, SIDACs, Diode - RF, Transistor - IGBTs - Arrays, Diode - Zener - Single, Transistor - Bipolar (BJT) - Arrays and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIHB33N60ET1-GE3 electronic components. SIHB33N60ET1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB33N60ET1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB33N60ET1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIHB33N60ET1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 600V 33A TO263
Serye :
E
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
33A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3508pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
278W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-263 (D²Pak)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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