NXP USA Inc. - PMWD26UN,518

KEY Part #: K6524795

[3713pcs Stock]


    Bilang ng Bahagi:
    PMWD26UN,518
    Tagagawa:
    NXP USA Inc.
    Detalyadong Paglalarawan:
    MOSFET 2N-CH 20V 7.8A 8TSSOP.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Single and Thyristors - SCR - Mga Module ...
    Kumpetensyang Pakinabang:
    We specialize in NXP USA Inc. PMWD26UN,518 electronic components. PMWD26UN,518 can be shipped within 24 hours after order. If you have any demands for PMWD26UN,518, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PMWD26UN,518 Mga katangian ng produkto

    Bilang ng Bahagi : PMWD26UN,518
    Tagagawa : NXP USA Inc.
    Paglalarawan : MOSFET 2N-CH 20V 7.8A 8TSSOP
    Serye : TrenchMOS™
    Katayuan ng Bahagi : Obsolete
    Uri ng FET : 2 N-Channel (Dual)
    Tampok ng FET : Logic Level Gate
    Drain sa Source Voltage (Vdss) : 20V
    Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 7.8A
    Rds On (Max) @ Id, Vgs : 30 mOhm @ 3.5A, 4.5V
    Vgs (th) (Max) @ Id : 700mV @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 23.6nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : 1366pF @ 16V
    Kapangyarihan - Max : 3.1W
    Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : 8-TSSOP (0.173", 4.40mm Width)
    Package ng Tagabigay ng Device : 8-TSSOP

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