NTHD4P02FT1G Pagpepresyo (USD) [508821pcs Stock]
- 1 pcs$0.07269
- 6,000 pcs$0.04653
- Bilang ng Bahagi:
- NTHD4P02FT1G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET P-CH 20V 2.2A CHIPFET.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Diode - Zener - Single and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NTHD4P02FT1G electronic components. NTHD4P02FT1G can be shipped within 24 hours after order. If you have any demands for NTHD4P02FT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTHD4P02FT1G Mga katangian ng produkto
Bilang ng Bahagi :
NTHD4P02FT1G
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET P-CH 20V 2.2A CHIPFET
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.2A (Tj)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
155 mOhm @ 2.2A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 10V
Tampok ng FET :
Schottky Diode (Isolated)
Power Dissipation (Max) :
1.1W (Tj)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
ChipFET™
Pakete / Kaso :
8-SMD, Flat Lead
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