IXTB30N100L Pagpepresyo (USD) [2171pcs Stock]
- 1 pcs$22.06054
- 25 pcs$21.95078
- Bilang ng Bahagi:
- IXTB30N100L
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 30A PLUS264.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Arrays, Diode - RF, Transistors - IGBTs - Single, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTB30N100L electronic components. IXTB30N100L can be shipped within 24 hours after order. If you have any demands for IXTB30N100L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTB30N100L Mga katangian ng produkto
Bilang ng Bahagi :
IXTB30N100L
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1000V 30A PLUS264
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
30A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
450 mOhm @ 500mA, 20V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
545nC @ 20V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
13200pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
800W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PLUS264™
Pakete / Kaso :
TO-264-3, TO-264AA
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